Effect of substrate temperature and pressure on properties of microcrystalline silicon films |
| |
Authors: | Wu Zhi-Meng Lei Qing-Song Geng Xin-Hu Zhao Ying Sun Jian and Xi Jian-Ping |
| |
Institution: | Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; Institute of Optoelectronics, Nankai University, Tianjin 300071, China |
| |
Abstract: | In this paper intrinsic microcrystalline silicon films have been prepared by very high
frequency plasma enhanced chemical vapour deposition (VHF-PECVD) with
different substrate temperature and pressure. The film properties were
investigated by using Raman spectra, x-ray diffraction, scanning
electron microscope (SEM), and optical
transmittance measurements, as well as dark conductivity. Raman results
indicate that increase of substrate temperature improves the microcrystallinity
of the film. The crystallinity is improved when the pressure increases from
50Pa to 80Pa and the structure transits from microcrystalline to amorphous
silicon for pressure higher than 80Pa. SEM reveals the effect of substrate
temperature and pressure on surface morphology. |
| |
Keywords: | microcrystalline silicon VHF-PECVD Raman spectra SEM |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|