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A novel opto-mechanical uncooled infrared detector
Institution:1. Micro-processing and Nano-technology Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;2. Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei 230027, China;1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravscká cesta 9, Bratislava 84104, Slovakia;2. Institute of Automotive Mechatronics, FEI STU, Ilkovi?ova 3, Bratislava 81219, Slovakia;3. International Laser Centre, Ilkovi?ova 3, Bratislava 84104, Slovakia;1. Scuola Normale Superiore, Piazza dei Cavalieri 7, I-56126 Pisa, Italy;2. Dipartimento di Chimica “Giacomo Ciamician” dell''Università di Bologna, Via Selmi 2, I-40126 Bologna, Italy;1. Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowska 34, 41-819 Zabrze, Poland;2. Institute of Physical and Theoretical Chemistry, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;3. Institute of Chemistry, University of Silesia, Szkolna 9, 40-006 Katowice, Poland;4. Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;1. Department of Physics, Faculty of Science & Health, Koya University, Koya, Kurdistan Region, Iraq;2. Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur, Malaysia
Abstract:This paper presents a novel opto-mechanical uncooled infrared detector that has successfully been fabricated. The detector is composed of a bi-material micro-cantilever array released from the Si substrate, whose reflector retains its shape even with changes in temperature. In comparison with the generally used sacrificial layer cantilever, the loss of incident IR energy caused by the reflection from and absorption by the silicon substrate is eliminated in this substrate-free structure. Moreover, the freestanding structure of the detector makes it easy to fabricate. The revised reflector in this structure has no distortion during its activity that keeps the sensitivity of the detector from being passivated. We present an infrared (IR) image of a person’s hand to demonstrate the ability of the structure to create images. The performance test showed that the noise-equivalent temperature difference of the imaging system can reach about 175 mK.
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