硅中磷杂质的SIMS定量检测

利用SIMS(二次离子质谱仪)测试了国产重掺砷硅单晶中的痕量杂质磷,通过样品前期处理和精密的仪器调试,使检测时间缩短,并使硅中磷的检测限达到5×10¹³ cm^-3。实验结果表明,样品的前期处理工艺会对检测结果产生影响。不同处理工艺得到的样品,在表面粗糙度方面产生区别。不同的表面粗糙度,影响到样品的测试时间和测试精度。同时,通过仪器调试,仪器的真空度达到1×10^-10 torr,使测试背底和检测限降低。

SIMS Test of Phosphorus in Silicon Wafer

Use is made of SIMS （secondary ion mass spectrometry） to test the trace amount of phosphorus in heavy arsenic doping silicon wafers.Pretreatment of the samples and precise control of the equipment significantly shorten the testing time and limit the phosphorus detection to as low a degree as 5×1013 cm-3.Experiments show that the pretreatment of samples have great effect on the results of the test.Surface roughness differs with each other when pretreatment ways vary.And the surface roughness will directly affect the testing time and accuracy.At the same time,by equipment adjustment,the vacuum reaches 1×10-10 torr,thus greatly decreasing the background noise of sample test and detection limit.