Extensive theoretical study on the low-lying electronic states of silicon monofluoride cation including spin-orbit coupling |
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Authors: | Liu Kun Bian Wensheng |
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Affiliation: | Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Molecular Reaction Dynamics, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, People's Republic of China. |
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Abstract: | Ab initio calculations on the low-lying electronic states of SiF+ are performed using the internally contracted multireference configuration interaction method with the Davidson correction and entirely uncontracted aug-cc-pV5Z basis set. The effects of spin-orbit coupling are accounted for by the state interaction approach with the full Breit-Pauli Hamiltonian. The entire 23 Omega states generated from the 12 valence Lambda-S states, which correlate with the first dissociation channel are studied for the first time. Good agreement is found between the calculated results and the available experimental data. The spin-orbit coupling effects on the potential energy curves and spectroscopic properties are studied. Various curve crossings are revealed, which could lead to the predissociation of the a3Pi, A1Pi, and (2)3Sigma+ states and the predissociation pathways are analyzed based upon the calculated spin-orbit matrix elements. The calculated ionization potentials of the ground-state SiF to a few states of SiF+ are in good agreement with the available experimental measurements. Moreover, the transition dipole moments of the dipole-allowed transitions and the transition properties for the A3Pi0+ -X1Sigma+ 0+ and B3Pi1-X1Sigma+ 0+ transitions are predicted, including the Franck-Condon factors and the radiative lifetimes. |
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Keywords: | excited states spin-orbit coupling predissociation spectroscopic constants curve crossings |
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