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Superconductivity in Heavily Boron-Doped Diamond Films Prepared by Electron Assisted Chemical Vapour Deposition Method
引用本文:李春燕 李博 吕宪义 李明吉 王宗利 顾长志 金曾孙. Superconductivity in Heavily Boron-Doped Diamond Films Prepared by Electron Assisted Chemical Vapour Deposition Method[J]. 中国物理快报, 2006, 23(10): 2856-2858
作者姓名:李春燕 李博 吕宪义 李明吉 王宗利 顾长志 金曾孙
作者单位:[1]State Key Laboratory for Superhard Material, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012 [2]Institute of Physics, Chinese Academy of Sciences, Beijing 100080
基金项目:Supported by the National High Technology Research and Development Programme of China under Grant No 2002AA325090.
摘    要:Heavily boron-doped thick diamond films with higher superconducting transition temperatures have been prepared by electron assisted chemical vapour deposition method. The results of scanning electron microscopy, Raman spectroscopy, x-ray diffraction, and Hall effect indicate that the films have nice crystalline facets, a notable decrease in the growth rate, and an increase in the tensile stress. Meanwhile, the film resistivity decreases with the increase of the carrier concentration. Our measurements show that the films with 4.88×10^20 cm^-3 and 1.61×10^21 cm^-3 carrier concentration have superconductivity, with onset temperatures of 9.7 K (8.9K for zero resistance) and 7.8 K (6.1 K for zero resistance), respectively.

关 键 词:超导电性 硼基金刚石薄膜 化学蒸汽沉积法 扫描电子显微术
收稿时间:2006-07-05
修稿时间:2006-07-05

Superconductivity in Heavily Boron-Doped Diamond Films Prepared by Electron Assisted Chemical Vapour Deposition Method
LI Chun-Yan, LI Bo, LU Xian-Yi, LI Ming-Ji, WANG Zong-Li, GU Chang-Zhi, JIN Zeng-Sun. Superconductivity in Heavily Boron-Doped Diamond Films Prepared by Electron Assisted Chemical Vapour Deposition Method[J]. Chinese Physics Letters, 2006, 23(10): 2856-2858
Authors:LI Chun-Yan   LI Bo   LU Xian-Yi   LI Ming-Ji   WANG Zong-Li   GU Chang-Zhi   JIN Zeng-Sun
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