Energy Levels in the Forbidden Band of the Bi4Ge3O12 Ceramics |
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Authors: | O M Bordun I I Kukharskii |
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Institution: | (1) I. Franko L'vov National University, 50 Dragomanov Str., L'vov, 79005, Ukraine |
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Abstract: | Thermally stimulated luminescence in the Bi4Ge3O12 ceramics and also in the ceramics of the parent components Bi2O3 and GeO2 is investigated. The similarity of the curves of the thermally stimulated luminescence in bismuth germanate with the structure of eulytine Bi4Ge3O12 and sillenite Bi12GeO20 is explained. The relation of the thermally stimulated luminescence band in Bi4Ge3O12 (with a maximum at 143 K) to the disruptions in the germanium sublattice and of the thermally stimulated band (with a maximum at 187 K) to the recombination processes in the bismuth sublattice is shown. It has been established that the light sum in the Bi4Ge3O12 ceramics is stored most effectively upon excitation by light in an energy region of 4.4 eV. |
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Keywords: | bismuth germanate thermally stimulated luminescence trapping center |
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