| A comparative study of YBa2Cu3O7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment |
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| 引用本文： | 王萍,李洁,陈莺飞,李绍,王佳,解廷月,郑东宁.A comparative study of YBa2Cu3O7-δ/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment[J].中国物理 B,2009,18(4):1679-1683. |
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| 作者姓名： | 王萍 李洁 陈莺飞 李绍 王佳 解廷月 郑东宁 |
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| 作者单位： | School of Physics and Electronics Science, Shanxi Datong University, Datong 037009, China;National Laboratory for Superconductivity, Institute of
Physics {& Beijing National Laboratory for Condensed Matter
Physics, Chinese Academy of Sciences, Beijing 100;National Laboratory for Superconductivity, Institute of
Physics {& Beijing National Laboratory for Condensed Matter
Physics, Chinese Academy of Sciences, Beijing 100190, China;National Laboratory for Superconductivity, Institute of
Physics {& Beijing National Laboratory for Condensed Matter
Physics, Chinese Academy of Sciences, Beijing 100190, China;National Laboratory for Superconductivity, Institute of
Physics {& Beijing National Laboratory for Condensed Matter
Physics, Chinese Academy of Sciences, Beijing 100190, China;National Laboratory for Superconductivity, Institute of
Physics {& Beijing National Laboratory for Condensed Matter
Physics, Chinese Academy of Sciences, Beijing 100190, China;School of Physics and Electronics Science, Shanxi Datong University, Datong 037009, China;National Laboratory for Superconductivity, Institute of
Physics {& Beijing National Laboratory for Condensed Matter
Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| 基金项目： | Project
supported by the National Natural Science Foundation of China (Grant
Nos 50672125 and 10574154), the Natural Science Foundation of Shanxi
Province, China (Grant No 2009011003-1), and the Youth Foundation of
Shanxi Datong University, China (Grant N |
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| 摘 要： | Highly epitaxial YBa2Cu3O7-δ (YBCO) and yttria-stabilized zirconia (YSZ) bilayer thin films have been deposited on silicon-on-insulator (SOI) substrates by using in situ pulsed laser deposition (PLD) technique. In the experiment, the native amorphous SiO2 layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15 s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO2 layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.
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| 关 键 词： | pulsed laser deposition thin film pretreatment SOI substrate |
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