| 低真空射频反应溅射Al2O3薄膜 |
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| 引用本文： | 魏晋云,刘滔.低真空射频反应溅射Al2O3薄膜[J].光电子技术,1998,18(2):166-168. |
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| 作者姓名： | 魏晋云 刘滔 |
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| 作者单位： | 云南师范大学太阳能研究所!昆明650092 |
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| 摘 要： | 用射频反应溅射法在硅片上制备Ａｌ２Ｏ３薄膜，在１０Ｐａ的低真空中和以适当比例混合的氩气和氧气中反应溅射以使薄膜充气氧化并保持一定的沉积速率，从而得到了理想配比和折射率为１．６０￣１．６５的Ａｌ２Ｏ３非晶薄膜。
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| 关 键 词： | 反应溅射 氧化铝薄膜 溅射压强 |
Al_2O_3 Thin Films Deposited with Reactive r-f Sputtering Technique in Low Vacuum |
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| Wei Jinyun, Liu Tao ,Liao Hua.Al_2O_3 Thin Films Deposited with Reactive r-f Sputtering Technique in Low Vacuum[J].Optoelectronic Technology,1998,18(2):166-168. |
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| Authors: | Wei Jinyun Liu Tao Liao Hua |
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| Abstract: | Stoichiometric amorphous Al,O, thin films have been deposited on silicon with reactive r-f sputtering technique in low vacuum (1O Pa) and at the appropriate rate of argon-oxygen gas mixture to obtain fully oxldized film. The value of refractive index of de-posited aluminum oxide films varied from 1. 60 to 0. 65. The rates of deposition do not de-crease noticeably under high pressure. |
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| Keywords: | reactive sputter aluminun oxide film sputtering pressure |
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