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Exact field-driven interface dynamics in the two-dimensional stochastic Ising model with helicoidal boundary conditions
Authors:J. Ricardo G. Mendonç  a
Affiliation:Instituto de Física, Universidade de São Paulo–Caixa Postal 66318, 05314-970 São Paulo, SP, Brazil; Instituto de Física, Universidade Federal de Uberlândia–Caixa Postal 593, 38400-902 Uberlândia, MG, Brazil
Abstract:We investigate the interface dynamics of the two-dimensional stochastic Ising model in an external field under helicoidal boundary conditions. At sufficiently low temperatures and fields, the dynamics of the interface is described by an exactly solvable high-spin asymmetric quantum Hamiltonian that is the infinitesimal generator of the zero range process. Generally, the critical dynamics of the interface fluctuations is in the Kardar–Parisi–Zhang universality class of critical behavior. We remark that a whole family of RSOS interface models similar to the Ising interface model investigated here can be described by exactly solvable restricted high-spin quantum XXZXXZ-type Hamiltonians.
Keywords:Stochastic Ising model   Bethe ansatz   RSOS growth model   Zero range process   Exclusion process   XXZ  si12.gif"   overflow="  scroll"  >XXZ quantum chain   KPZ universality class
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