SIMPLE TECHNIQUES FOR DETERMINING THE SMALL-SIGNAL EQUIVALENT CIRCUIT OF MESFET’s |
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Authors: | Mohamed Kameche and Mohamed Feham |
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Institution: | (1) National Centre of Space Techniques, BP 13, 1 Avenue de la Palestine, 31200 Arzew, Algeria;(2) Department of Electronics, University of Tlemcen, BP 119, Tlemcen, 13000, Algeria |
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Abstract: | Simple techniques for determining the broadband small signal equivalent circuit (SSEC) of MESFETs are presented in this paper.
The intrinsic elements are calculated using two-dimensional method from the Y parameters, which are obtained from the Fourier
analysis of the device transient response to voltage-step perturbations at the drain and gate electrodes. Whereas, the parasitic
external elements are determined by simple approximations used in transmission line modeling. In addition, a new technique
is also proposed to determine the source and drain series resistances. A comparison of the SSEC of three different MESFETs
technologies shows that the MESFETs on GaN and 4H-SiC are suitable for high power applications. The method used to determine
the intrinsic elements is validated with simulated data obtained by Monte Carlo method. |
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Keywords: | Small-signal Finite element method Monte Carlo method Fourier analysis |
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