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Proton and native-ion conductivities in Y2O3 at high temperatures
Institution:1. Department of Computing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong;2. Institute of Information Science, Academia Sinica, No 128, Academia Road, Section 2, Nankang, Taipei 11529, Taiwan
Abstract:The ionic conductivity of hot-pressed samples of undoped Y2O3 has been studied by the emf-method in atmospheres of controlled oxygen and water-vapor pressures. The variation in the ionic conductivity was studied as a function of time (7 months at 1200°C), temperature (600–1300°C), water-vapor pressure (3–1400 Pa), and oxygen pressure (10−10 −105 Pa). The overall conductivity can be divided into contributions from electronic carriers (mainly electron holes), native ionic defects, and hydrogen defects. The transport of charged hydrogen species is dominated by migration of “free” protons. The hydrogen-ion conductivity is detectable under all conditions and becomes the dominant ionic-conductivity contribution at high water-vapor pressures and low temperatures. The ionic contributions are discussed in terms of grain-boundary and bulk transport properties. Native-ion and proton-diffusion coefficients in yttria are estimated. Equations for the emf of oxide specimens containing charged hydrogen defects have been derived.
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