Nanoscale dislocation patterning in Bi(1 1 1)/Si(0 0 1) heteroepitaxy |
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Authors: | G Jnawali H Hattab CA Bobisch A Bernhart E Zubkov R Möller M Horn-von Hoegen |
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Institution: | Department of Physics and Center for Nanointegration Duisburg-Essen (CeNIDE), University of Duisburg-Essen, Lotharstr. 1, 47057 Duisburg, Germany |
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Abstract: | Continuous, atomically flat, and epitaxial Bi(1 1 1) films could be grown on Si(0 0 1). The inherent strain of 2.3% between the Bi(1 1 1) and Si(0 0 1) lattices is relieved by the formation of a grating like one-dimensional misfit dislocation array at the heterointerface. The lattice distortions around each dislocation give rise to a pronounced height depression Δh = 0.12 nm of the surface, which results in a spot splitting in low-energy electron diffraction and a height contrast in scanning tunneling microscopy (STM). Using STM surface profiles across these depressions, the Burgers vector of the underlying isolated non-interacting dislocations is estimated to be 0.377 nm. For thicker Bi films the ordering of the dislocation network is increased. This reflects an increase of repulsive interaction between neighboring dislocations. |
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Keywords: | Bismuth Epitaxial growth Misfit dislocation Burgers vector |
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