Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0 0 0 1) |
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Authors: | C. Virojanadara,R. Yakimova,M. Syvä jä rvi,L.I. Johansson |
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Affiliation: | a Department of Physics, Chemistry, and Biology, Linköping University, S-581 83 Linköping, Sweden b MAX-lab, Lund University, S-221 00 Lund, Sweden |
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Abstract: | The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03°) than on those with a larger (0.25°). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene-SiC structures. |
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Keywords: | Graphene Silicon carbide Carbon Low-energy electron microscopy (LEEM) Low-energy electron diffraction (LEED) Scanning tunneling microscopy (STM) |
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