| Abstract: | Energetic and kinetic characteristics of charge carrier trapping and recombination centres in graphite-like boron nitride produced by gas-phase deposition are discussed. Local levels in X-ray excited PBN are studied using the method of thermally activated spectroscopy of luminescence and conduction, and their position in the band gap is determined from the temperature dependences of the diffusive current and depolarization current. Acceptor and donor level models for different PBN are developed. Their influence on conduction and on luminescence is determined. The scheme of hole-electron transitions by luminescence is suggested. The carbon influence on the nature of the defects creating local levels is discussed. |
