| Abstract: | Single crystals of the HgGaInS4 layered compound were grown by the iodine transport technique. Results of their optical, photoelectric, and radiative properties' study are presented. The band gap and the binding energy of holes on the sensitizing centres were determined to be Eg = 2.41 eV and Ea = 0.2 eV, respectively. A presence of quasi-continuously distributed states was stated which are responsible for the exponential segment of the absorption edge and which take part in the radiative recombination. |
