Superior structural and electronic properties for amorphous silicon–germanium alloys deposited by a low temperature hot wire chemical vapor deposition process |
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| Institution: | 1. Department of Physics, University of Oregon, Eugene, OR 97403, USA;2. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, USA;1. Materials Science Department, FCT-UNL, Campus da Caparica, Portugal;2. INESC Microsistemas e Nanotecnologias, Lisbon, Portugal;3. Department of Chemical and Biological Engineering, IST-UTL, Lisbon, Portugal |
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| Abstract: | Very good electronic properties of hot-wire CVD a-Si,Ge:H alloys have been established by junction capacitance methods. The samples were deposited using a tantalum filament maintained at about 1800 °C instead of the usual 2000 °C tungsten filament process. Urbach energies below 45 meV were found, as well as annealed defect densities below 1016 cm−3, for Ge fractions up to 30 at.%. However, samples with 1019 cm−3 levels of oxygen exhibited much broader Urbach energies and higher defect densities. Light induced degradation was examined in detail for one a-Si,Ge:H alloy sample and compared to the behavior of PECVD grown a-Si:H alloys of similar optical gap. |
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