Undoped and arsenic-doped low temperature (～165 °C) microcrystalline silicon for electronic devices process

Microcrystalline silicon films are deposited at 165 °C by plasma enhanced chemical vapor deposition (PECVD) from silane, highly diluted in hydrogen–argon mixtures. Ar addition during the deposition allows to increase the crystallinity from 24% to 58% for 20 nm thick films. The final crystallinity for 350 nm thick films reaches 72% with an increase in the grain size. A further increase, still 80%, is provided by substrate pre-treatment using hydrogen plasma before the deposition process. Arsenic doped μc-Si films, deposited on previous optimized (5 W power and 1.33 mbar pressure) undoped films without stopping the plasma between the deposition of both layers, show high electrical conductivity up to 20 S cm^?1.