Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer |
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| Institution: | 1. School of Physics, Shandong University, Jinan 250100, China;2. School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China;3. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;4. Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China;1. Sandia National Laboratories, Albuquerque, NM 87185, USA;2. Center for High Technology Materials, Univ. of New Mexico, Albuquerque, NM 87131, USA;1. University of Grenoble-Alpes, CEA, LETI, Minatec Campus, F-38054 Grenoble, France;2. Soitec S.A., 38190 Bernin, France;1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;3. School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 402160, China;1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | Different InGaN/GaN multi quantum wells (MQWs) structures were grown by metalorganic chemical vapor deposition (MOCVD). Samples were investigated by photoluminescence (PL), atom force microscopy (AFM) and double crystal X-ray diffractometry (DCXRD) to character their optical, morphological and crystal properties. By inserting the strain relief layer, the PL intensity was increased more than two times. The surface morphology was improved and the density of V-pits was reduced from 16–18×108 to 6–7×108/cm2. Further, the interface abruptness was also improved. We attributed the improvements of the quality of InGaN/GaN MQWs to the relief of strain in the InGaN/GaN MQWs. |
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