Optical and morphological properties of porous diamond-like-carbon films deposited by magnetron sputtering |
| |
| Institution: | 1. Núcleo de Simulação e Análise de Sistemas Complexos, Laboratório Associado de Computação e Matemática Aplicada, Instituto Nacional de Pesquisas Espaciais (INPE), 12201-970 São José dos Campos, SP, Brazil;2. Grupo de Física Básica e Aplicada em Materiais Semicondutores, Laboratório de Propriedades Ópticas, Instituto de Física, Universidade Federal da Bahia, Campus Ondina, 40170-290 Salvador, BA, Brazil;3. Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology, SE-100 44 Stockholm, Sweden;4. Department of Physics, Linköping University, SE 581 83 Linköping, Sweden;5. Departamento de Física, Universidade Federal de Pernambuco, 50670 901 Recife, PE, Brazil;6. Grupo de Dispositivos Nanoestruturados, Departamento de Física, Universidade Federal do Paraná, 81531-990 Curitiba, PR, Brazil;1. Departamento de Fisicá, Universidade Estadual de Maringá, Maringá, PR, Brazil;2. Departamento de Fisicá, Universidade Estadual de Maringá, Maringá, PR, Brazil;3. Departamento de Engenharia de Materiais, Vitreous Materials Laboratory, Universidade Federal de São Carlos, São Carlos, SP, Brazil |
| |
| Abstract: | Porous diamond-like-carbon (PDLC) thin films obtained on silicon substrate by DC low energy magnetron sputtering have been investigated by photoluminescence, transmission and reflection spectroscopy, photoacoustic and spectroscopic ellipsometry. The absorption features observed for these films show similarities with those of porous silicon (PS) as well as in the performed gradient structural pattern classification of the SFM porosity, by means of the computational GPA-flyby environment on PS and PDLC samples. The dielectric function is also calculated for the bulk diamond-like carbon using the full-potential linearized augmented plane wave method within the framework of local density approximation to density functional theory. From the measurement a low real dielectric constant of about 4.5 at 0.8 eV was found whereas the calculated e1(0) for the bulk diamond has a value of 5.5. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
