Copper nitride (Cu3N) thin films deposited by RF magnetron sputtering |
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| Institution: | 1. Institut FEMTO-ST, UMR 6174, CNRS, Univ. Bourgogne Franche-Comté, UTBM, Site de Montbéliard, F-90010 Belfort, France;2. Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taipei 243, Taiwan;3. Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan;4. Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan;5. ICD LASMIS Institut Charles Delaunay, Laboratoire des Systèmes Mécaniques et d’Ingénierie Simultanée (UMR CNRS 6279) – UTT, Antenne de Nogent-52, Pôle Technologique de Haute-Champagne, 52800 Nogent, France;6. LRC CEA-ICD LASMIS, Nogent International Center for CVD Innovation (NICCI), UTT Antenne de Nogent, pôle technologique de haute Champagne, 52800 Nogent, France;7. LRC CEA/UTBM LIS-HP, Site de Montbéliard, 90010 Belfort Cedex, France;1. School of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece;2. Nanostructured Materials and Devices Laboratory, School of Engineering, University of Cyprus, PO Box 20537, Nicosia 1678, Cyprus;3. Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Str. 15, 12489 Berlin, Germany;1. College of Science, Xi’an Shiyou University, Xi’an, Shaanxi 710065, China;2. Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA;1. National Centre for Nuclear Research (NCBJ), Material Physics Department, A. Soltana 7, 05-400 Otwock, Poland;2. Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, Warsaw, Poland;3. Institute of Physics, Polish Academy of Sciences, Lotnikow 32/46, 02-668 Warsaw, Poland |
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| Abstract: | The copper nitride thin films were prepared on glass substrate by RF magnetron sputtering method. At pure nitrogen atmosphere, the nitrogen flow rate affects the copper nitride thin films’ structures. Only a little part of nitrogen atoms insert into the body center of Cu3N structure and parts of nitrogen atoms insert into Cu3N crystallites boundary at higher nitrogen flow rate. But the indirect optical energy gap, Eopg, decreases with increasing nitrogen flow rate. The typical value of Eopg is 1.57 eV. In a nitrogen and argon mixture atmosphere, when the nitrogen partial was less than 0.2 Pa at 50 sccm total flow rate, the (1 1 1) peak of copper nitride appears. Thermal decomposition temperature of Cu3N thin films deposited in pure nitrogen and 30 sccm flow rate was less than 300 °C. The surface morphology was smooth. |
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