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Correlation between the 2.7 eV and 4.3 eV photoluminescence bands in silica glass
Affiliation:Department of Electrical, Electronics and Media Engineering, Shonan Institute of Technology, 1-1-25 Tujido-Nishikaigan, Fujisawa, Kanagawa 251-8511, Japan
Abstract:Our previous studies have reported the excitation energy dependence of the 2.7 and 4.3 eV photoluminescence (PL) bands in oxygen deficient silica glass at low temperature (∼20 K). An oxygen vacancy (O3triple bondSisingle bondSitriple bondO3) was thought to be the origin of the two PL bands. In order to verify the origin of the 2.7 and 4.3 eV PL bands in silica glass, we measured the PL band of various thermally heat treated silica glasses. In the sample after heat treatment, we did not observe the 4.3 eV PL band, though we did observe the 2.7 eV PL band. These results suggest that these two PL bands do not have a common origin.
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