Selective crystallization of amorphous silicon thin film by a CW green laser |
| |
| Institution: | 1. Advanced Display Research Center, Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Republic of Korea;2. Department of Physics, Han Yang University, Sungdong-ku, Seoul 133-791, Republic of Korea;1. Materials Science Department, FCT-UNL, Campus da Caparica, Portugal;2. INESC Microsistemas e Nanotecnologias, Lisbon, Portugal;3. Department of Chemical and Biological Engineering, IST-UTL, Lisbon, Portugal |
| |
| Abstract: | A simple and effective method for selective CW laser crystallization of a-Si (CLC) without pre-patterning of a-Si has been reported. By using a metallic shadow mask instead of a photolithographic process, we can reduce the process steps and time compared with a conventional CLC process. It shows very high performance – mobility of 173 cm2/s, Ioff of ～10?13 A @ Vd = ?5 V, Ion/Ioff of >108 – as a p-channel poly-Si TFT even without any pre-/post-treatment to improve TFT characteristics such as plasma hydrogenation. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
