An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system |
| |
| Institution: | 1. IVG, Institute for Combustion and Gas Dynamics and CENIDE, Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47057 Duisburg, Germany;2. Department of Natural Sciences, The Open University of Israel, 4353701 Raanana, Israel;3. School of Chemistry, Tel Aviv University, 69978 Tel Aviv, Israel |
| |
| Abstract: | In this paper, gallium nitride (GaN) growth chemistry is characterized by two competing reaction pathways. An overview of GaN gas-phase and surface-phase chemistry is used to generate a comprehensive model for epitaxial GaN growth from the commonly used precursors, trimethylgallium ((CH3)3Ga) and ammonia (NH3). The role of reactor geometry in controlling the selectivity among the competing reaction pathways is explored in the context of a planetary radial-flow CVD system. Finally, application of a geometrically based uniformity criterion is presented for film uniformity optimization. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
