Study of anomalous behavior of steady state photoconductivity in highly crystallized undoped microcrystalline Si films |
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| Affiliation: | 1. Department of Physics, Opto-electronic Laboratory, S.B. 204, Indian Institute of Technology Kanpur, Kanpur 208016, Uttar Pradesh, India;2. Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau cedex, France;1. Materials Science Department, FCT-UNL, Campus da Caparica, Portugal;2. INESC Microsistemas e Nanotecnologias, Lisbon, Portugal;3. Department of Chemical and Biological Engineering, IST-UTL, Lisbon, Portugal |
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| Abstract: | The photoconductivity (σph) of highly crystallized dense undoped hydrogenated microcrystalline silicon (μc-Si:H) films was measured as a function of light illumination over a wide temperature range (∼15–325 K). A thermal quenching behavior in σph was observed at ∼240 K. The photoconductivity exponent (γ) was found to be sublinear with γ as low as 0.13. A density of states (DOS) profile having a steep conduction band tail, and valence band tail with two distinct distributions was found to be necessary to understand the electronic transport behavior in the inherently heterogeneous μc-Si:H films. |
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