| Institution: | 1. Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa 992-8510, Japan;2. Japan Society for the Promotion of Science, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan;3. CREST, Japan Science and Technology Agency, 4-3-16 Jonan, Yonezawa 992-8510, Japan;1. Japan Fine Ceramics Center (JFCC), 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan;2. Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan;1. Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya 466-8555, Japan;2. Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Nagoya 466-8555, Japan;3. Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;1. AIXTRON SE, Kaiserstrasse 98, 52134 Herzogenrath, Germany;2. Institut de Ciència dels Materials, Universitat de València, E-46980 Paterna (València), Spain;3. RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen, Germany;1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People''s Republic of China;2. ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P. O. Box 912, Beijing 100083, People''s Republic of China |
