Characterization of pure ZnO thin films prepared by a direct photochemical method |
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Institution: | 1. Instituto de Química, Pontificia Universidad Católica de Valparaíso, Valparaíso, Chile;2. Department of Chemistry, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 |
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Abstract: | In this paper, amorphous ZnO thin films were obtained by direct UV irradiation of β-diketonate Zn(II) precursor complexes spin-coated on Si(1 0 0) and fused silica substrates. ZnO films were characterized by means of XPS, X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). These analyses revealed that as-deposited films are amorphous and have a rougher surface than thermally treated films. Optical characterization of the films showed that these are highly transparent in the visible spectrum with an average transmittance of up to 95% over 400 nm, and an optical band-gap energy of 3.21 eV for an as-deposited film, and 3.27 eV for a film annealed at 800 °C. Low resistivity values were obtained for the ZnO films (1.0 × 10−2 Ω cm) as determined by Van der Pauw four-point probe method. |
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