Dynamics of low temperature PECVD growth of microcrystalline silicon thin films: Impact of substrate surface treatments |
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| Institution: | 1. Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4-70126 Bari, Italy;2. CIEMAT, Avda. Computense, 22 E-28040 Madrid, Spain;1. Materials Science Department, FCT-UNL, Campus da Caparica, Portugal;2. INESC Microsistemas e Nanotecnologias, Lisbon, Portugal;3. Department of Chemical and Biological Engineering, IST-UTL, Lisbon, Portugal |
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| Abstract: | Microcrystalline silicon (μc-Si) films have been deposited on polyimide, Corning glass and c-Si(0 0 1) by rf plasma-enhanced chemical vapour deposition (PECVD) using both SiF4–H2 and SiH4–H2 plasmas. The effect of substrate pre-treatment using SiF4–He and H2 plasmas on the nucleation of crystallites is investigated. Real-time laser reflectance interferometry monitoring (LRI) revealed the existence of a ‘crystalline seeding time’ that strongly impacts on the crystallite nucleation, on the structural quality of the substrate/μc-Si interface and on film microstructure. It is found that SiF4–He pre-treatment of substrates is effective in suppressing porous and amorphous interface layer at the early nucleation stage of crystallites, resulting in direct deposition of μc-Si films also on polyimide at the temperature of 120 °C. |
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