Transparent thin film transistors based on indium oxide semiconductor |
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| Institution: | 1. Dep. de Ciência dos Materiais, FCT-UNL, Quinta da Torre, 2829-516 Caparica, Portugal;2. LMSCE, Complexo I-IST, Av. Rovisco Pais, 1049-001 Lisboa, Portugal;3. Dep. de Física, IST, Av. Rovisco Pais, 1049-001 Lisboa, Portugal;4. Instituto Tecnológico e Nuclear, Estrada Nacional 10, 2686-953 Sacavém, Portugal;5. ICEM/Dep. de Física, FC-UL, 1749-016 Lisboa, Portugal |
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| Abstract: | Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the optical and electrical properties. The films obtained have electrical resistivity ranging from 13.7 to 1.7 × 107 Ω cm. Transparent TFTs made with those films as semiconducting and conducting layers, respectively, present threshold voltages near 2 V and on/off ratios of 104. |
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