Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals |
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| Institution: | 1. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan;2. Central Research Institute of Electric Power Industry (CRIEPI), Kanagawa, Japan;3. DENSO CORPORATION, Aichi, Japan;4. Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan;1. Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;3. State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Co. Ltd., Beijing 102209, China;4. Wuhu TUS-semiconductor Co. Ltd., Wuhu 241000, China;1. Crystal Growth Lab, Materials Department 6 (i-meet), University of Erlangen-Nuremberg (FAU), 91058 Erlangen, Germany;2. Fraunhofer Institute for Integrated Circuits, Development Center for X-Ray Technology (EZRT), 90768 Fürth, Germany;1. ?ukasiewicz Research Network - Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warsaw, Poland;2. ENSEMBLE3 Sp. z o.o, 133 Wolczynska Str., 01-919 Warsaw, Poland;3. Warsaw University of Technology, Faculty of Materials Science and Engineering, 141 Wo?oska Str., 02-507 Warsaw, Poland;4. Institute of Physics of the Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland;1. Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;2. Department of Crystalline Materials Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan |
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| Abstract: | The dislocation formation and propagation processes in physical vapor transport (PVT) grown 4H silicon carbide (4H–SiC) single crystals have been investigated using defect selective etching and transmission electron microscopy (TEM). It was found that while the growth initiation process generally increased the density of threading dislocations in the grown crystal, for certain areas of the crystal, threading dislocations were terminated at the growth initiation. Foreign polytype inclusions also introduced a high density of dislocations at the polytype boundary. In the polytype-transformed areas of the crystal, almost no medium size hexagonal etch pits due to threading screw dislocations were observed, indicating that the foreign polytype inclusions had ceased the propagation of threading screw dislocations. Based on these results, we argued the formation and propagation of the threading dislocations in PVT grown SiC crystals, and proposed the dislocation conversion process as a plausible cause of the density reduction of threading dislocations during the PVT growth of SiC single crystals. |
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