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Atomic arrangement of Al-induced clusters on Si(0 0 1) surface at high temperature
Institution:1. Institute of Physics and Applied Physics, Yonsei University, Shinchon-dong, Seodaemoon-Gu 134, Seoul 120-749, South Korea;2. Department of Techno-marketing, Mokwon University, Taejeon 301-729, South Korea;3. Department of Physics, Kangwon National University, Chuncheon 200-701, South Korea;4. Division of Materials Science and Technology, Korea Institute of Science and Technology, Seoul 130-791, South Korea;1. School of Physics and Technology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China;2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;3. Department of Physics and Astronomy, Texas A&M University, College Station, TX 77843, USA;1. Instituto Mexicano del Petróleo, Dirección de Investigación en Transformación de Hidrocarburos, Eje Central Lázaro Cárdenas 152, 07730 México D.F., Mexico;2. Institute of Physics and Mechatronics, University of Pannonia, PO Box 158, Veszprém H-8201, Hungary;3. Área de Física de Procesos Irreversibles, División de Ciencias Básicas e Ingeniería, Universidad Autónoma Metropolitana, Av. San Pablo 180 Col. Reynosa, 02200 México D.F., Mexico;1. Institut Charles Gerhardt, MACS, UMR 5253 CNRS-ENSCM-UM1-UM2, 8, rue de l’Ecole Normale, 34296 Montpellier cedex 5, France;2. PSL Research University, Institut de Recherche de Chimie Paris IRCP, CNRS – Chimie ParisTech, 11 rue Pierre et Marie Curie, F-75005 Paris, France
Abstract:The atomic structure of the Al-induced clusters on Si(0 0 1) surface formed by the annealing of 0.5 ML Al/Si(0 0 1) at 500 °C has been studied using coaxial impact collision ion scattering spectroscopy (CAICISS). CAICISS results proposed that the Al atoms occupy the cave site (T4 site) and off-centered T4 site. To determine the structure of the Al-induced clusters definitely, classical ion-scattering trajectory simulations using scattering and recoiling imaging code (SARIC) have been performed for the recently proposed most possible four different cluster models (Bunk, Zotov, Kotlyar, and Zavodinsky model). Our CAICISS spectra and simulation results show that the Bunk model is the best plausible one among the models. As the results of the simulations, it is found that Al–Si dimers has been oriented on the topmost layer of the Si(0 0 1) surface with a bonding length (Δz) of 1.00 ± 0.05 Å.
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