Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition |
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| Institution: | 1. Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, FIN-02015 Espoo, Finland;2. Accelerator Laboratory, University of Helsinki, P.O. Box 43, FIN-00014, Finland;1. Key Laboratory for Soft Chemistry and Functional Materials, Ministry of Education, Nanjing University of Science and Technology, Nanjing 210094, China;2. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 106, Taiwan;1. School of Chemistry and Materials Science, Liaoning Shihua University, Fushun, 113001, Liaoning, China;2. State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, Liaoning, China;1. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeongro, Yuseong, Daejeon 34114, Republic of Korea;2. Department of Chemistry, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea;3. Department of Advanced Materials and Chemical Engineering, University of Science and Technology (UST), 217 Gajeong-ro, Republic of Korea;1. Research Center for Advanced Materials Science (RCAMS), King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia;2. Department of Physics, College of Science, King Khalid University, Abha 61413, Saudi Arabia;3. Department of Chemistry and University Centre for Research & Development, Chandigarh University, Mohali 140413, Punjab, India;4. Department of Physics, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia |
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| Abstract: | Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition (ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi atomic ratio in bismuth silicate thin films. The crystallization of compounds formed in the Bi2O3–SiO2 and Bi2O3–TiO2 systems was investigated. Control of the stoichiometry of Bi–Si–O thin films was studied when deposited on Si(1 0 0) and crystallization was studied for films on sapphire and MgO-, ZrO2- and YSZ-buffered Si(1 0 0). The Bi–Ti–O thin films were deposited on Si(1 0 0) substrate. Both Bi–Si–O and Bi–Ti–O thin films were amorphous after deposition. Highly a-axis oriented Bi2SiO5 thin films were obtained when the Bi–Si–O thin films deposited on MgO-buffered Si(1 0 0) were annealed at 800 °C in nitrogen. The full-width half-maximum values for 200 peak were also studied. An excess of bismuth was found to improve the crystallization of Bi–Ti–O thin films and the best crystallinity was observed with Ti/Bi atomic ratio of 0.28 for films annealed at nitrogen at 1000 °C. Roughness of the thin films as well as the concentration depth distribution were also examined. |
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