Effect of annealing and gamma irradiation on undoped and Eu3+-doped Y2SiO5 single crystals |
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| Institution: | 1. National Center for Nuclear Research, st. A. So?tana 7/23, Otwock-?wierk, Poland;2. Institute of Electronic Materials Technology, st.Wólczynska 133, 01-919 Warsaw, Poland;3. Institute of Ceramics and Building Materials, Postepu 9, 02-676 Warsaw, Poland;4. Warsaw University of Technology, st. Wo?oska 14, 00-001 Warsaw, Poland |
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| Abstract: | The absorption spectra of the undoped Y2SiO5 and Eu3+-doped Y2SiO5 crystals grown by the Czochralski technique were compared before and after annealing and, similarly, the unannealed and annealed crystals after γ-ray irradiation. The absorption bands of Eu2+ ions with peaks at 300 and 390 nm were observed in the as-grown Y2SiO5:Eu3+ crystal. These peaks were more intense in H2-annealed and irradiated Y2SiO5:Eu3+ crystals. The additional absorption peaks at 260 and 320-330 nm which were attributed to F color centers and O? hole centers were observed in irradiated undoped Y2SiO5 and Y2SiO5:Eu3+ crystals, respectively. |
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