Toward the fast deposition of highly crystallized microcrystalline silicon films with low defect density for Si thin-film solar cells |
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Institution: | 1. Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan;2. Department of Functional Materials Science, Saitama University, 255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan;1. Materials Science Department, FCT-UNL, Campus da Caparica, Portugal;2. INESC Microsistemas e Nanotecnologias, Lisbon, Portugal;3. Department of Chemical and Biological Engineering, IST-UTL, Lisbon, Portugal |
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Abstract: | In this study, employing a high-density, low-temperature SiH4–H2 mixture microwave plasma, we investigate the influence of source gas supply configuration on deposition rate and structural properties of microcrystalline silicon (μc-Si) films, and demonstrate the plasma parameters for fast deposition of highly crystallized μc-Si films with low defect density. A fast deposition rate of 65 Å/s has been achieved for a SiH4 concentration of 67% diluted in H2 with a high Raman crystallinity of Xc > 65% and a low defect density of (1–2) × 1016 cm?3 by adjusting source gas supply configuration and plasma conditions. A sufficient supply of deposition precursors, such as SiH3, as well as atomic hydrogen H on film growing surface is effective for the high-rate synthesis of highly crystallized μc-Si films, for the reduction in defect density, and for the improvement in film homogeneity and compactability. A preliminary result of p–i–n structure μc-Si thin-film solar cells using the resulting μc-Si films as an intrinsic absorption layer is presented. |
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