纳米磷化镓粉体还原氮过程的Raman光谱分析

利用Raman光谱对还原氮后的纳米磷化镓(GaP)粉体进行了表征。结果表明:纳米GaP粉体表面含有Ga-O,P-O和H-O化学键。此外,进行氮还原过程后,在Raman位移约为1700~3300cm-1范围内(相当于709~800nm或1.55~1.75eV),纳米GaP的Raman光谱出现了一个宽、强荧光发射峰;而在未进行通氮处理的纳米GaPRaman光谱中,没有观察到该荧光峰的存在。本文对该荧光发射峰的起因作了初步分析。

Analysis of Raman Scattering of Gallium PhosphideNanoparticles Undergoing Nitrogen Reduction

By means of Raman scattering technique, the surface structure and optical character- istics of gallium phosphide ( GaP ) nanoparticles undergoing nitrogen reduction were investigat- ed. The results show that there exist Ga-O, P-O and O-H chemical bonds on the surface of GaP. And also, in comparison to the Raman spectrum of the GaP nanoparticles without bub- bling treatment by nitrogen, it has been found that a wide and strong fluorescence emission peak is presented in the Raman spectrum of the GaP nanoparticles with bubbling treatment by nitrogen. The fluorescence peak is observed in the range of Raman shift from about 1700 to 3300 cm-1, i.e., the wavelength range from about 709 to 800 nm. The mechanism leading to the fluorescence emission is analyzed preliminarily.