首页 | 本学科首页   官方微博 | 高级检索  
     

提拉法生长镓酸锂晶体及缺陷研究
引用本文:刘世良,周圣明,王银珍,徐军. 提拉法生长镓酸锂晶体及缺陷研究[J]. 人工晶体学报, 2006, 35(5): 988-991
作者姓名:刘世良  周圣明  王银珍  徐军
作者单位:中国科学院上海光学精密机械研究所,上海,201800;中国科学院上海光学精密机械研究所,上海,201800;中国科学院上海光学精密机械研究所,上海,201800;中国科学院上海光学精密机械研究所,上海,201800
基金项目:中科院“百人计划”项目资助
摘    要:研究了提拉法生长的镓酸锂单晶的生长习性和结晶质量.晶体表面呈乳白色且表面粗糙.通过光学显微镜、四晶X射线衍射、透射光谱和电感耦合等离子体发射光谱对样品进行了表征,结果表明,在(001)面的抛光样品上存在三种缺陷: [110]和[-110]方向的十字线、[010]方向排列的气泡包裹物以及平行于(010)面的界面,界面的产生起因于(010)晶面的滑移;晶体的结晶质量从顶部到底部逐渐下降,这是由于在生长过程中氧化锂的挥发导致熔体成分偏离化学计量比造成的.

关 键 词:单晶  镓酸锂  提拉法  衬底
文章编号:1000-985X(2006)05-0988-04
收稿时间:2006-03-13
修稿时间:2006-03-13

Single Crystal Growth of LiGaO2 by Czochralski Method and Defects Characterization
LIU Shi-liang,ZHOU Sheng-ming,WANG Yin-zhen,XU Jun. Single Crystal Growth of LiGaO2 by Czochralski Method and Defects Characterization[J]. Journal of Synthetic Crystals, 2006, 35(5): 988-991
Authors:LIU Shi-liang  ZHOU Sheng-ming  WANG Yin-zhen  XU Jun
Affiliation:Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
Abstract:The growth behavior and crystalline quality of LiGaO_2 single crystal grown by Czochralski method were investigated.Optical microscope,four-crystal X-ray diffraction,transmission spectra and inductively coupled plasma atomic emission spectrometer(ICP-AES) were used to characterize the as-grown crystal.The results show that,the as-grown crystal is milky and the surface is rough;besides two kinds of defects such as cross lines along and direction and inclusions arraying straight lines along direction,a new kind of defect,interfaces parallel to(010) plane,is observed.(010) crystal plane slip may contribute to the formation of the interfaces.The crystalline quality of as-grown crystal declines from the top to bottom during the crystal pulling,the reason for which is associated with the off-stoichiometry of the melt composition due to the evaporation of lithia from the melt.
Keywords:single crystal  LiGaO_2  Czochralski  substrate
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《人工晶体学报》浏览原始摘要信息
点击此处可从《人工晶体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号