| MOCVD生长AlGaN薄膜的X光电子能谱 |
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| 引用本文： | 苑进社,陈光德,林景瑜,汪红星. MOCVD生长AlGaN薄膜的X光电子能谱[J]. 光子学报, 2003, 32(8): 925-927 |
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| 作者姓名： | 苑进社 陈光德 林景瑜 汪红星 |
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| 作者单位： | 西安交通大学应用物理系,西安,710049;西安理工大学应用物理系,西安,710048;西安交通大学应用物理系,西安,710049;美国堪萨斯州大学物理系,堪萨斯,66502-2601 |
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| 摘 要： | 用X光电子能谱和X射线衍射谱方法分析了MOCVD生长的AlGaN薄膜的实际表面形态和晶体结构基于XPS测量结果,通过分析计算,发现实际表面除GaN外存在Ga2O3和Al2O3及其它与O有关的络合物构成的混合氧化物覆盖层,估计覆盖层厚度约1.2nmXRD结果显示生长的AlGaN薄膜为以GaN(0002)取向为主的多晶结构。
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| 关 键 词： | MOCVD AlGaN薄膜 X光电子能谱 X射线衍射谱 |
| 收稿时间： | 2002-09-26 |
| 修稿时间： | 2002-09-26 |
XPS Analysis of AlGaN Film Grown by MOCVD |
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| Yuan Jinshe,Chen Guangde,Lin Jingyu,Jiang Hongxing. XPS Analysis of AlGaN Film Grown by MOCVD[J]. Acta Photonica Sinica, 2003, 32(8): 925-927 |
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| Authors: | Yuan Jinshe Chen Guangde Lin Jingyu Jiang Hongxing |
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| Affiliation: | 1. Department of Applied Physics, Xi’an Jiaotong University, Xi’an 710049, China;2. Department of Applied Physics, Xi’an University of Technology, Xi’an 710048, China;3. Department of Physics, Kansas State University, Manhattan, Kansas 66502-2601, USA |
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| Abstract: | The actual surface morphology of AlGaN layer grown by MOCVD was analyzed using XPS and XRD. Through analysis and calculation based on the XPS results, it was found that the composition of the layer consists of carbon contamination, native oxides that predominantly in the Ga 2O 3 and Al 2O 3 forms and other oxide besides gallium nitride. The thickness of the mixture oxides is roughly 1.2 nm XRD patterns indicate AlGaN polycrystalline layer evolution although growth in GaN (0002) crystal plane appears dominant. |
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| Keywords: | MOCVD AlGaN films XPS XRD |
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