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Magnetic and luminescent properties of manganese-doped ZnSe crystals |
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| Authors: | Vadim P Sirkeli Dmitrii D Nedeoglo Natalia D Nedeoglo Ivan V Radevici Raisa L Sobolevskaia Konstantin D Sushkevich Erkki Lähderanta Alexander V Lashkul Reino Laiho Jens-Peter Biethan Oktay Yilmazoglu Dimitris Pavlidis Hans L Hartnagel |
| Institution: | 1. Department of Physics and Engineering, Moldova State University, 60 A. Mateevici Street, MD-2009 Chisinau, Moldova;2. Department of Information Technologies, Mathematics and Physics, Comrat State University, 17 Galatsan Street, MD-3800 Comrat, Moldova;3. Department of Mathematics and Physics, Lappeenranta University of Technology, FIN-53851 Lappeenranta, Finland;4. Wihuri Physical Laboratory, University of Turku, FIN-20014 Turku, Finland;5. Department of High Frequency Electronics, Technische Universität Darmstadt, Merckstrasse 25, D-64283 Darmstadt, Germany;6. Department of Microwave Electronics, Technische Universität Darmstadt, Merckstrasse 25, D-64283 Darmstadt, Germany |
| Abstract: | Magnetic and photoluminescent properties of manganese-doped ZnSe crystals with different impurity concentrations were investigated. The concentration of Mn2+ ions in ZnSe crystals has been varied from 0.01 to 0.3 at%. Magnetic and photoluminescent studies have confirmed the introduction of Mn in ZnSe crystals. It was established that Mn2+ ions are responsible for the emission bands with maximum at 616 nm and 633 nm, which correspond to 4T2→6A1 and 4T1→6A1 intracentre transitions of Mn2+ ions respectively. It was found that the concentration quenching of the photoluminescent bands is associated with Mn2+ ions, which are due to the formation of Mn–Mn clusters. Magnetic properties studies have shown that at high doping levels the manganese atoms form Mn–Mn clusters in ZnSe. From the temperature dependence of magnetic susceptibility of ZnSe:Mn crystals that follows the Curie–Weiss law, it was possible to estimate the Curie–Weiss temperature Θ(x) and the effective Mn–Mn antiferromagnetic exchange constant (J1). |
| Keywords: | Magnetic phenomena Magnetic semiconductors Semiconducting II&ndash VI materials Luminescence Defects |
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