Theoretical investigations of the effect of vacancies on the geometric and electronic structures of zinc sulfide |
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Authors: | Jinhuan Yao Yanwei Li Ning Li Shiru Le |
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Institution: | 1. College of Chemistry and Bioengineering, Guilin University of Technology, Guilin, Guangi 541004, PR China;2. GuangXi Key Laboratory of New Energy and Building Energy Saving, Guilin University of Technology, Guilin, Guangxi 541004, PR China;3. Natural Science Research Center, Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001,PR China |
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Abstract: | The effects of S-vacancy and Zn-vacancy on the geometric and electronic structures of zinc blende ZnS are investigated by the first-principles calculation of the plane wave ultrasoft pseudopotential method based on the density functional theory. The results demonstrate that both S-vacancy and Zn-vacancy decrease the cell volume and induce slight deformation of the perfect ZnS. Furthermore, this change of geometric structure caused by Zn-vacancy is more obvious than the one due to the S-vacancy. The formation energy of S-vacancy is higher than that of Zn-vacancy, indicating that Zn-vacancy is easier to form than S-vacancy in ZnS crystal. Electronic structure analysis shows that Zn-vacancy increases the band-gap of ZnS from 2.03 eV to 2.15 eV, while the S-vacancy has almost no effect on the band-gap of ZnS. Bond population analysis shows that Zn-vacancy increases covalence character of the Zn–S bonds around Zn-vacancy, while S-vacancy shows a relatively weak effect on the covalence character of Zn–S bonds. |
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Keywords: | ZnS Vacancy Electronic structure Geometric structure First-principles calculation |
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