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Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals
Authors:NM Gasanly
Institution:Department of Physics, Middle East Technical University, 06800 Ankara, Turkey
Abstract:The absorption edge of undoped Tl2Ga2S3Se crystals have been studied through transmission and reflection measurements in the wavelength range 440–1100 nm and in the temperature range 10–300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature γ=−2.6×10−4 eV/K and the absolute zero value of the band gap energy Egi(0)=2.42 eV were obtained.
Keywords:Semiconductors  Optical properties  Energy band gap  Photoluminescence  X-ray diffraction
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