Numerical optimization of carrier confinement characteristics in (AlxGa1−xN/AlN)SLs/GaN heterostructures |
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Authors: | Jieqin Ding Xiaoliang Wang Hongling Xiao Cuimei Wang Haibo Yin Hong Chen Chun Feng Lijuan Jiang |
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Institution: | 1. Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, PR China;2. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, PR China;3. ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics |
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Abstract: | We present numerical optimization of carrier confinement characteristics in (AlxGa1−xN/AlN)SLs/GaN heterostructures in the presence of spontaneous and piezoelectrically induced polarization effects. The calculations were made using a self-consistent solution of the Schrödinger, Poisson, potential and charge balance equations. It is found that the sheet carrier density in GaN channel increases nearly linearly with the thickness of AlN although the whole thickness and equivalent Al composition of AlxGa1−xN/AlN superlattices (SLs) barrier are kept constant. This result leads to the carrier confinement capability approaches saturation with thicknesses of AlN greater than 0.6 nm. Furthermore, the influence of carrier concentration distribution on carrier mobility was discussed. Theoretical calculations indicate that the achievement of high sheet carrier density is a trade-off with mobility. |
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Keywords: | SLs 2DEG GaN HEMT |
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