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The electric field gradient at111Cd in vanadium oxides
Authors:V. Naicker  A. Bartos  K. P. Lieb  M. Uhrmacher  T. Wenzel  D. Wiarda
Affiliation:(1) II. Physikalisches Institut der Universität Göttingen, Bunsenstrasse 7–9, D-37073 Göttingen, Germany
Abstract:The electric field gradient (efg) of111Cd in polycrystalline V2O5 was studied using perturbed angular correlation (PAC) spectroscopy, with the111In activity ion-implanted at 400 keV. Between the individual steps of an isochronal annealing program, a distinct efg (vQ1=88.1(3) MHz, ngr1=0.62(2)) was recorded the contribution of which increased with annealing temperature up to 74% at 870 K. Corresponding X-ray analysis of inactive V2O5 samples, which underwent the same annealing treatment, proved that the sample always stayed as V2O5. Since V2O5 has only one equivalent cation site, it is concluded that this efg belongs to111Cd at this site. Oxidation of a vanadium foil atT=675 and 800 K at
$$p_{{text{O}}_{text{2}} } $$
=200 mbar also yielded this efg. From PAC measurements in VO2, two well-defined efg's were found above and below the metal-semiconductor transition at 340 K, which are tentatively attributed to the monoclinic and the tetragonal phase.Supported by Deutsche Forschungsgemeinschaft and DAAD.On leave from the University of Durban-Westville, South Africa.
Keywords:
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