Investigation of reduced graphene oxide effects on ultra-violet detection of ZnO thin film |
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| Affiliation: | 1. Materials Engineering Department, Tarbiat Modares University, Tehran, Iran;2. Malek-Ashtar University of Technology, Tehran, Iran;1. New Technologies Research Centre, University of West Bohemia, Plzeň 30614, Czech Republic;2. Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Il’kovičova 3, 81219 Bratislava, Slovakia;3. Centre for Nanoscience and Technology, Anna University, Chennai 600025, India;1. Department of Chemistry, Howard University, Washington, DC 20059, USA;2. Department of Civil and Environmental Engineering, Howard University, Washington, DC 20059, USA;1. School of Environment, Henan Normal University, Key Laboratory for Yellow River and Huai River Water Environmental and Pollution Control, Ministry of Education, Henan Key Laboratory for Environmental Pollution Control, Xinxiang, Henan 453007, PR China;2. Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR China;3. School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007, PR China;1. Universidade de Brasília, Instituto de Química, Brasília, DF 70910-900, Brazil;2. Pontifícia Universidade Católica de São Paulo, FCET, São Paulo, SP 01303-050, Brazil;3. Universidade de Brasília, Instituto de Física, Brasília, DF 70910-900, Brazil;4. Universidade Federal do Pará, Instituto de Ciências, Exatas e Naturais (ICEN), Belém, PA 66075-900, Brazil;1. Department of Electrical Engineering, Department of Materials Science & Engineering, Center of Excellence for Green Nanotechnologies, University of California, Los Angeles, CA 90095, USA;2. School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;3. Research Institute, School of System Engineering, Kochi University of Technology, Kami, Kochi 7828502, Japan |
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| Abstract: | The reduced graphene oxide (rGO) incorporated ZnO thin films were fabricated by dip-coating method. The Raman and FT-IR spectra of 0.075 wt% incorporated composite film showed reduction of GO in composite film. The transmittanceProd. Type: FTP spectra have shown that rGO incorporation increase the visible light absorption of ZnO thin film while the calculated band gaps of samples were decreased from 3.28 to 3.25 eV by increasing the rGO content. The linear trend of I–V curve suggests an ohmic contact between ZnO and rGO. Besides, it was found that by increasing the rGO content, the electrical resistivity was decreased from 4.32×102 Ω cm for pure ZnO film to 2.4×101 Ω cm for 0.225 wt% rGO incorporated composite film. The composite photodetectors not only possessed a desirable UV photosensitivity, but also the response time of optimum sample containing 0.075 wt% rGO was reduced to about one-half of pure ZnO thin film. Also, the calculated signal to noise (SNR) showed that highly conductive rGO in composite thin films facilitate the carrier transportation by removing the trapping centers. The mechanism of photoresponsivity improvement of composite thin films was proposed by carrier transportation process. |
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| Keywords: | ZnO Reduced graphene oxide UV detector Photoresponsivity |
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