Influence of annealing porous templates in an ammonia atmosphere on gallium nitride growth behaviors in hydride vapor phase epitaxy |
| |
| Institution: | 1. Institute of Nano Science and Nano Technology, University of Kashan, P.O. Box 87317-51167, Kashan, Islamic Republic of Iran;2. Department of Chemistry, University of Zabol, P. O. Box 98615-538, Zabol, Islamic Republic of Iran;1. School of Chemistry and Environment, South China Normal University, Guangzhou 510006, PR China;2. School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, PR China;1. Faculty of Science, Fayoum University, 63514 Fayoum, Egypt;2. National Research University, MPEI, Krasnokazarmennaya 14, Moscow 111250, Russian Federation;3. Center for High Pressure Science and Technology Advanced Research, 1690 Cailun Rd., Shanghai, 201203, China |
| |
| Abstract: | Porous templates were fabricated by hydrogen-etching metal organic chemical vapor deposited gallium nitride (GaN); these templates were used as substrates for the growth of GaN via hydride vapor phase epitaxy. The influence of annealing porous templates on GaN growth behavior was investigated. GaN epitaxied on the unannealing porous template followed the Volmer–Weber mode with the void preserved at the growth plane, whereas the GaN film on the annealed porous templates exhibited a layer-by-layer growth and filled the porous material. The GaN crystal quality was characterized by high-resolution XRD and CL, the results indicated that GaN grown with pores preserved at the template interface had a lower dislocation density than that grown with pores filled, and the best GaN film had a TD density of 104 cm?2. |
| |
| Keywords: | Porous templates HVPE Gallium nitride Annealing |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
