Institution: | 1. College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007, China;2. Department of Physics, Zhengzhou Normal University, Zhengzhou, Henan 450044, China;3. Department of Physics, Fudan University, Shanghai, China;1. Department of Applied Physics, Institute of Nanosensors and Biotechnology, Dankook University, Yongin 448-701, Republic of Korea;2. Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;3. School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;4. Department of Applied Physics, The University of Tokyo, Tokyo 113-8654, Japan;5. Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan;1. Institut d’Electronique Fondamentale, Université Paris-Sud, CNRS, UMR 8622, F-91405 Orsay, France;2. Lycée Jacques Prévert, F-27500 Pont-Audemer, France;3. Russian Quantum Center, 100 Novaya Street, Skolkovo, Moscow region 143025, Russia;4. Laboratoire Interdisciplinaire des Energies de Demain (LIED), UMR 8236 Université Paris Diderot, CNRS, 5 Rue Thomas Mann, 75013 Paris, France;1. Beijing Municipal Key Lab of Advanced Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China;2. Energy Storage and Novel Technology of Electrical Engineering Department, China Electric Power Research Institute Limited Company, Beijing, 100192, China;3. Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, USA |