Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55 μm |
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| Institution: | 1. University of Gent, vakgroep Vaste Stof Wetenschappen;2. Hungarian Academy of Sciences;2. Slovak Academy of Sciences;4. Sultan Qaboos University;5. Istanbul Medeniyet University, Turkey;1. Department of Physics, Faculty of Science, Dicle University, 21280 Diyarbakir, Turkey;2. Department of Science, Faculty of Education, Dicle University, 21280 Diyarbakir, Turkey;3. Science and Technology Application and Research Center (DUBTAM), Dicle University, 21280 Diyarbakir, Turkey;1. Department of Computer Engineering, Technology Faculty, Duzce University, Duzce, Turkey;2. Department of Opticianry, Vocational School of Medical Sciences, Turgut Ozal University, Ankara, Turkey;3. Department of Physics, Faculty of Science and Arts, Gazi University, Ankara, Turkey;1. Department of Physics, Center of Excellent for Advanced Materials Research, Faculty of Science, King Khalid University, PO Box 9004, Abha, Saudi Arabia;2. Nano-Science Lab., Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;3. Semiconductor Lab., Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;4. Environmental Studies and Research Institute (ESRI), University of Sadat City, Sadat Branch, Egypt;5. Physics Department, Faculty of Science, Firat University, Elazig, Turkey;1. Department of Opticianry, Vocationel School of Medical Sciences, Turgut Ozal University, Ankara, Turkey;2. Department of Computer Engineering, Technology Faculty, Duzce University, Duzce, Turkey;3. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey;1. ?stanbul Technical University, Department of Chemistry, Maslak, 34469 ?stanbul, Turkey;2. Y?ld?z Technical University, Department of Physics, 34220 Esenler-?stanbul, Turkey;3. Y?ld?z Technical University, Department of Technical Programs, Maslak, ?stanbul, Turkey |
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| Abstract: | Band structures of n–i doped lattice-matched GaNAsBi/GaAs quantum wells are studied theoretically using a self-consistent calculation (based on the envelop function formalism) combined with the 16-band anti-crossing model. Operating at 1.55 μm, these QWs can represent active zones of temperature-insensitive optoelectronic device applications intended for optical fiber communications. We have calculated physical parameters of the structures such as the confining potential profiles, the Fermi level, the subband energies and their corresponding wavefunctions as well as the oscillator strength of inter-band transitions, the subband occupations, and the confined electrons density distributions. Finally, the absorption coefficient spectra of GaNAsBi-based QWs are also computed. |
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| Keywords: | GaNAsBi-based QWs BAC model Doping Confined electrons density Absorption coefficient |
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