Development of transparent conducting copper and iron co-doped cadmium oxide films: Effect of annealing in hydrogen atmosphere |
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| Institution: | 1. Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Kingdom of Bahrain;2. Nanotechnology Centre, University of Bahrain, P.O. Box 32038, Kingdom of Bahrain;1. Institute of Physics of National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine;2. Sumy State University, Rymsky-Korsakov Street 2, 4007 Sumy, Ukraine;1. Department of Physics, College of science, University of Basrah, Basrah, Iraq;2. School of Physics, Universiti Sains Malaysia, 11800 Pulau Penang, Malaysia |
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| Abstract: | Hydrogenated (annealed in hydrogen atmosphere) cadmium oxide (CdO) thin films co-doped with iron (Fe) of different levels and fixed (2.5%) copper (Cu) amount were deposited on glass and silicon wafer substrates by thermal evaporation. The films were characterised with X-ray fluorescence, X-ray diffraction, optical spectroscopy, and dc-electrical measurements. The obtained results show important improvements in the conductivity, mobility, and carrier concentration compared to un-doped and non-hydrogenated CdO. Hydrogenated CdO doped with 2.5% Cu and 1.3% Fe improved the conductivity (2293.6 S/cm) by ~46 times, mobility (78.31 cm2/V s) by ~11 times, and carrier concentration (1.82×1020 cm?3) by ~4 times. This suggests the possibility of using CdO:Cu:Fe–H as transparent-conducting-oxide and dilute-magnetic-semiconductor field of applications. |
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| Keywords: | Cadmium-iron-copper oxide Fe- and Cu-doped CdO Co-doping TCO |
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