首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Hydrogen adsorption and storage of Ca-decorated graphene with topological defects: A first-principles study
Institution:1. College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi, P.R. China;2. School of Physics Electrical Information Engineering, Ningxia University, Yinchuan 750021, Ningxia, P.R. China;3. College of Physics and Mechanical and Electronic Engineering, Xian University of Arts and Science, Xian 710065, Shaanxi, P.R. China;4. ICMMO/LEMHE, Université Paris-Sud 11, 91405 Orsay Cedex, France;1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, PR China;2. National Key Laboratory for Advanced Composites in Special Environment, Harbin Institute of Technology, Harbin 150080, PR China
Abstract:As a candidate for hydrogen storage medium, geometric stability and hydrogen capacity of Ca-decorated graphene with topological defects are investigated using the first-principle based on density functional theory (DFT), specifically for the experimentally realizable single carbon vacancy (SV), 585 double carbon vacancy (585 DCV) and 555–777 double carbon vacancy (555–777 DCV) defects. It is found that Ca atom can be stabilized on above defective graphenes since Ca?s binding energy on vacancy defect is much larger than its cohesive energy. Up to six H2 molecules can stably bind to a Ca atom on defective graphene with the average adsorption energies of 0.17–0.39 eV/H2. The hybridization of the Ca-3d orbitals with H2-σorbitals and the electrostatic interaction between the Ca cation and the induced H2 dipole both contribute to the H2 molecules binding. Double-side Ca-decorated graphene with 585 DCV and 555–777 DCV defects can theoretically reach a gravimetric capacity of 5.2 wt% hydrogen, indicating that Ca-decorated defective graphene can be used as a promising material for high density hydrogen storage.
Keywords:Hydrogen adsorption  storage  Topological defect  Density functional theory
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号