Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs |
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| Affiliation: | 1. Laboratory of Micro-Nano Optoelectronics, Department of Physics, Xiamen University, Xiamen 361005, People׳s Republic of China;2. Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, People׳s Republic of China;3. Department of Electronic Engineering, Xiamen University, Xiamen 361005, People׳s Republic of China;1. Institute of Physics, National Academy of Sciences of Ukraine, 46 pr. Nauki, Kiev 03028, Ukraine;2. Physical–technical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod 603950, Russia;1. Department of Science, Bushehr Branch, Islamic Azad University, Bushehr, Iran;2. Department of Physics, Ayatollah Amoli Branch, Islamic Azad University, Amol, Iran;1. Department of Applied Physics, Xi׳an Jiaotong University, Xi׳an 710049, China;2. MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi׳an Jiaotong University, Xi׳an 710049, China;3. School of Science, Xi׳an University of Architecture and Technology, Xi׳an 710055, China;1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;4. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China |
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| Abstract: | Optical and electrical properties of InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) annealed in pure O2 ambient (500 °C) and pure N2 ambient (800 °C) were systematically investigated. The temperature-dependent photoluminescence measurements showed that high-temperature thermal annealing in N2 ambient can induce indium clusters in InGaN MQWs. Although the deep traps induced by indium clusters can act as localized centers for carriers, there are many more dislocations out of the trap centers due to high-temperature annealing. As a result, the radiative efficiency of the sample annealed in N2 ambient was lower than that annealed in O2 ambient at room temperature. Electrical measurements demonstrated that the LEDs annealed in O2 ambient were featured by a lower forward voltage and there was an increase of ~41% in wall-plug efficiency at 20 mA in comparison with the LEDs annealed in N2 ambient. It is thus concluded that activation of the Mg-doped p-GaN layer should be carried out at a low-temperature O2 ambient so as to obtain LEDs with better performance. |
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| Keywords: | p-GaN Thermal annealing Photoluminescence Indium cluster LED |
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