Investigation of defect modes in a defective photonic crystal with a semiconductor metamaterial defect |
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| Affiliation: | 1. Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, and Advance Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan;2. Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan;1. Department of Electrical Engineering, Since and Research Branch, Islamic Azad University, Tehran 14778-93855, Iran;2. Department of Electrical and Computer Engineering, Tarbiat Modares University, Tehran 14117-13116, Iran;3. Plasma Physic Research Center, Since and Research Branch, Islamic Azad University, Tehran 14778-93855, Iran |
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| Abstract: | In this work, we theoretically investigate the properties of defect modes in a defective photonic crystal containing a semiconductor metamaterial defect. We consider the structure, (LH)N/DP/(LH)N, where N and P are respectively the stack numbers, L is SiO2, H is InP, and defect layer D is a semiconductor metamaterial composed of Al-doped ZnO (AZO) and ZnO. It is found that, within the photonic band gap, the number of defect modes (transmission peaks) will decrease as the defect thickness increases, in sharp contrast to the case of using usual dielectric defect. The peak height and position can be changed by the variation in the thickness of defect layer. In the angle-dependent defect mode, its position is shown to be blue-shifted as the angle of incidence increases for both TE and TM waves. The analysis of defect mode provides useful information for the design of tunable transmission filter in semiconductor optoelectronics. |
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| Keywords: | Semiconductors Metamaterials Photonic crystals Wave properties |
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