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Effect of dielectric mismatch on impurity binding energy in double ellipsoidal quantum dots
Institution:1. Equipe d''Optique et Electronique du Solide, Département de Physique, Faculté des Sciences, Université Chouaïb Doukkali, B. P. 20 El Jadida principale, El Jadida, Royaume du Maroc, Morocco;2. Laboratoire d''Instrumentation, Mesure et Contrôle, Département de Physique, Faculté des Sciences, Université Chouaïb Doukkali, B. P. 20 El Jadida principale, El Jadida, Royaume du Maroc, Morocco;3. Département de Physique, Ecole Nationale Supérieure d''Enseignement Technique, Université Mohammed V Souissi, B. P. 6207 Rabat-Instituts, Rabat, Royaume du Maroc, Morocco;4. LCPMC, Institut de Chimie, Physique et Matériaux, Université de Lorraine, 1 Bd Arago, 57070 Metz, France;1. Department of Chemistry, Brahmankhanda Basapara High School, Basapara, Birbhum 731215, West Bengal, India;2. Department of Chemistry, Bishnupur Ramananda College, Bishnupur, Bankura 722122, West Bengal, India;3. Department of Chemistry, Hetampur Raj High School, Hetampur, Birbhum 731124, West Bengal, India;4. Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal, India;1. Ecole Nationale Supérieure des Arts et Métiers (ENSAM), Université Hassan II, 150 Nile, Sidi Othmane, Casablanca, Morocco;2. Department of Physics, Govt. Arts and Science College, Melur, 625106 Madurai, India;1. Laboratoire de Physique des Matériaux et Modélisation des Systèmes, (LP2MS), Unité Associée au CNRST-URAC 08, University of Moulay Ismail, Physics Department, Faculty of Sciences, B.P. 11201, Meknes, Morocco;2. LCP-A2MC, Institut de Chimie, Physique et Matériaux, Université de Lorraine, Metz, France;3. Max-Planck-Institut für Physik Complexer Systeme, Nöthnitzer Str. 38, D-01187, Dresden, Germany
Abstract:The present study seeks to scrutinize the effect of polarization charges on the electronic properties of double ellipsoidal quantum dots. In this regard, the effective-mass approximation within a variational scheme is used and the binding energy of hydrogenic impurity located at the center of ellipsoidal quantum dot (EQD) is calculated for GaAs/GaAlAs/AlAs structure. The effect of surface polarization charges due to impurity and self-polarization charges on the binding energy is considered. The results showed that the binding energy depends not only on the thickness of the intermediate layer but also on the ellipticity constant.
Keywords:Bessel function  Binding energy  Ellipsoidal quantum dot  Polarization charge
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